ISFH Passivated Contact Silicon Solar Cell Efficiency Of 25%

- Jan 17, 2017 -

The German Hamelin Solar Energy Research Institute (ISFH) and the University of Hanover electronic materials and Devices Research Institute (MBE) successful cooperation will be solar cell conversion efficiency up to 25%.          

DAkkS certified the results of independent calibration laboratory ISFH Cal-TeC confirmed and published in the Singapore PVSEC 26 conference results.          

Passivation to avoid high recombination          

To achieve the high efficiency of 25%, mainly because of the "two POLO" passive contacts, to avoid the high recombination metal contacts below.          

The POLO represents the polysilicon oxide, which consists of a thin silicon oxide and a doped polysilicon layer. The recombination is reduced by POLO contact, and the open circuit voltage reaches 723 mV.          

The poles are located in the back of the POLO layer of the solar cell, to avoid the metal fingers on the front of the cover, and reduces the parasitic absorption in polycrystalline silicon. This efficiency is achieved in the 3.97cm2 cell area (designated area).          

This work is implemented by a joint project funded by the German Federal Ministry of economics and energy (BMWi).